Integrated NanoMaterials Laboratory

Nanomaterials and nanostructures grown in INML are used in lasers, solar cells, detectors, transistors, modulators, and a wide range of other electronic and photonic devices.



Users of the INML are requested to acknowledge their use of the Technology Centers at CNSI in their scholarly publications. All publications listed here included data acquired or generated in the INML.


  1. Gamini Ariyawansa, Charles J. Reyner , Elizabeth H. Steenbergen , Joshua M. Duran , Joshua D. Reding , John E. Scheihing , Henry R. Bourassa, Baolai L. Liang, Diana L. Huffaker, InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors, Phys. Lett. 108, 022106 (2016).
  2. C. Debnath, M. B. Santos, Y. Cheng, I. R. Sellers, K. HossainR. B. Laghumavarapu, B. L. Liang, and D. L. Huffaker, High-density InAs/GaAs1-xSbx quantum dots grown by molecular beam epitaxy for use in intermediate band solar cells, J. Appl. Phys. 119, 114301 (2016).
  3. Kim, Hyunseok; Farrell, Alan C.; Senanayake, Pradeep; Wook-Jae Lee, and Diana L. Huffaker, Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links, Nano Lett., 16 (3), pp 1833–1839 (2016).
  4. Wook-Jae Lee, Hyunseok Kim, Alan C. Farrell, Pradeep Senanayake, and Diana L. Huffaker, Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources, Appl. Phys. Lett. 108, 081108 (2016).
  5. Wook-Jae Lee, Pradeep Senanayake, Alan C. Farrell, Andrew Lin, Chung-Hong Hung, and Diana L. Huffaker, High Quantum Efficiency Nanopillar Photodiodes Overcoming the Diffraction Limit of Light, Nano Lett. 16 (1), pp 199–204 (2016).
  6. D. D. Couto Jr., P. T. de Almeida, G. E. dos. Santos, M. A. G. Balanta, H. F. Andriolo, J. A. Brum, M. J. S. P. Brasil, and F. Iikawa, B. L. Liang, and D. L. Huffaker, Carrier dynamics dictated by bimolecular recombination in type-II quantum dots coupled to quantum wells, submit to Nanotechnology (2016).
  7. C. Juang, D. L. Prout, C. Reyner, B. L. Liang, A. F. Chatziioannou, D. L. Huffaker, Characterization and Demonstration of Single Pixel GaSb Detectors for Gamma Radiation, submit to Appl. Phys. Express. (2016).
  8. Komolibus, T. Piwonski, C. J. Reyner, B. L. Liang, G. Huyet, D. Huffaker, E.A. Viktorov, and J. Houlihan, Absorption dynamics of type-II GaSb/GaAs quantum dots, submit to Appl. Phys. Lett. (2016).
  9. Guodong Wang, Baolai Liang, Mukul Debnath, Aparna Das, Diana L. Huffaker, Yuriy Mazur, Morgan E. Ware, Gregory G. Salamo, Optical performance of the InGaAs/GaAs surface quantum dots, submit to J. Luminescence (2016).



  • Zhexin Zhao, Ramesh B. Laghumavarapu, Paul J. Simmonds, Haiming Ji, Baolai Liang, and Diana L. Huffaker, Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots, J. Crystal. Growth. 425 (2015) 312-315 (DOI:10.1016/j.jcrysgro.2015.02.049).
  • Bor-Chau Juang, Ramesh Babu Laghumavarapu, Paul Simmonds, Andrew Lin, Baolai Liang, and Diana Huffaker, GaSb Thermophotovoltaic Cells Grown on GaAs by Molecular Beam Epitaxy Using Interfacial Misfit Arrays, Appl. Phys. Lett. 106(11) 111101 (2015).
  • Komolibus, T. Piwonski, K. Gradkowski, G. Huyet, C. J. Reyner, B. L. Liang, D. L. Huffaker, and J. Houlihan, Ultrafast dynamics of type-II GaSb/GaAs quantum dots, Appl. Phys. Lett. 106, 031106 (2015).
  • M. Ji, Baolai Liang, Paul J. Simmonds, Bor-Chau Juang, Tao Yang, Robert J. Young, and Diana L. Huffaker, Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with highly efficient photoluminescence, Appl. Phys. Lett. 106(10), 103104 (2015).
  • Alan C. Farrell, Pradeep Senanayake, Chung-Hong Hung, Abhijeet Rajagopal, Marc Currie, Georges El-howayek, Majeed Hayat, Diana L. Huffaker, Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodetectors, SCIENTIFIC REPORTS 5: 17580    ( 2015).
  • Alan C. Farrell, Wook-Jae Lee, Pradeep Senanayake, Michael A. Haddad, Sergey Prihodko, , Diana L. Huffaker, High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition, NANO LETTERS 15(10): 6614-6619 ( 2015).


  • Christopher D. Yerino, Paul J. Simmonds, Baolai Liang, Vitaliy G. Dorogan, Morgan E. Ware, Yuriy I. Mazur, Daehwan Jung, Diana L. Huffaker, Gregory J. Salamo, and Minjoo Larry Lee, Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap, Appl. Phys. Lett. 105, 071912 (2014).
  • Paul J. Simmonds, Meng Sun, Ramesh B. Laghumavarapu, Baolai Liang, Andrew G. Norman, Jun-Wei Luo, and Diana L. Huffaker, Improved quantum dot stacking for intermediate band solar cells using strain compensation, Nanotechnology 25(44) 445402 (2014).
  • Zachary S. Bittner, Staffan Hellstroem, Stephen J. Polly, Ramesh B. Laghumavarapu, Baolai Liang, Diana L. Huffaker, and Seth M. Hubbard, Investigation of Optical Transitions in InAs/GaAs(Sb)/AlAsSb QDs using Modulation Spectroscopy, Appl. Phys. Lett., 105, 253903 (2014)
  • Christopher Yerino, Paul Simmonds, Baolai Liang, Daehwan Jung, Christian Schneider, Sebastian Unsleber, Minh Vo, Diana Huffaker, Sven Höfling, Martin Kamp, and Minjoo Larry Lee, Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting”, Appl. Phys. Lett., 105, 251901 (2014).
  • C. Scofield, A. Lin, M. Haddad, D. L. Huffaker, “Axial diffusion barriers in near-infrared nanopillar LEDs”, Nano Letters, 14(11), 6037-6041, (2014).
  • Andrew Lin, Joshua Shapiro, Holger Eisele, and Diana Huffaker, “Tuning the Au-free InSb nancrystal morphologies grown by patterned metal-organic chemical vapor deposition”, Advanced Functional Materials, 24(27), 4311-4316, (2014).



  1. L. Liang, P. S. Wong, D. L. Huffaker, T. Tran, C. K. Shih, V. G. Dorogan, Yu. I. Mazur, M. E. Ware, G. J. Salamo, Site-controlled formation of InGaAs quantum nanostructures – tailoring the dimensionality and the quantum confinement, Nano Research, 6(4), 235-242, 2013.
  2. Wei Liu, Baolai Liang, Diana Huffaker, and Harold Fetterman, Anisotropic performance of high speed electro-optic modulators with InGaAs quantum dot chain active region, Opt. Lett. 38(20) 4262-4264, (2013) — Spotlight on Optics Highlighted Article
  3. Gao, S. Combrie, B.L.i Liang, P.r Schmitteckert, G. Lehoucq, S. Xavier, X.A. Xu, K. Busch, D. L. Huffaker, A.Rossi, C.W. Wong, Strongly coupled slow-light polaritons in disordered one-dimensional localized states, Scientific Reports, 3: 1994 | DOI: 10.1038/ (2013).
  4. J. Simmonds, C. D. Yerino, M. Sun, B.L. Liang, D. L. Huffaker, V. G. Dorogan, Y. I. Mazur, G. J. Salamo, M. L. Lee, Tuning quantum dot luminescence below the bulk band-gap using tensile strain, ACS Nano, 7(6) 5017-5023, (2013).
  5. Qingyuan Y Gu, Maud Gicquel-Guézo, Frederic Grillot, Slimane Loualiche, Julie Le Pouliquen, Thomas Batte, Olivier Dehaese, Baolai L Liang, Diana L. Huffaker, Photonics based on carbon nanotubes, Nanoscale Research Letters, 8:300, (2013).
  6. Ramesh B. Laghumavarapu, Baolai Liang, Zachary Bittner, Tugba S. Navruz, Seth Hubbard and Diana L. Huffaker, GaSb/InGaAs quantum dot-well hybrid structures as active regions in solar cells, Solar Energy Materials and Solar Cells, 114 165-171, 2013.
  • Jiri Thoma, Baolai Liang, Liam Lewis, Stephen Peter Hegarty, Guillame Huyet, Diana L. Huffaker, Carrier localization and effect of in-situ annealing in quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition, Appl. Phys. Lett., 102, 113101, 2013.
  • Jiri Thoma, Baolai Liang, Charles J. Reyner, Tomasz Jan Ochalski, David P. Williams, Stephen P. Hegarty, Guillame Huyet, Diana L. Huffaker, Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices, Appl. Phys. Lett. 102(1), 013120, 2013.
  • Jiri Thoma, Baolai Liang, Liam Lewis, Stephen Peter Hegarty, Guillame Huyet, Diana L. Huffaker, Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices, Appl. Phys. Lett. 102(5), 053110, 2013.
  1. Lin, B. L. Liang, V. G. Dorogan, Yu. I. Mazur, G. G. Tarasov, G. J. Salamo, D. L. Huffaker, Strong passivation effect on the properties of InAs surface quantum dot hybrid structure, Nanotechnology, 24(7), 075701, 2013.
  • Tobias Nowozin, Leo Bonato, Annika Högner, Alissa Wiengarten, Dieter Bimberg Wei-Hsun Lin, Shih-Yen Lin, Charles J. Reyner, Baolai Liang, Diana L. Huffaker, 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots, Phys. Lett. 102(5), 052115, 2013.
  1. Andrew Lin, Joshua Shapiro, Adam C. Scofield, Baolai Liang, Diana L. Huffaker, Enhanced InAs nanopillar electrical transport by in-situ passivation, Appl. Phys. Lett. 102(5), 053115, 2013.
  • Meng Sun, Paul Jonathan Simmonds, Ramesh Babu Laghumavarapu, Andrew Lin, Charles J. Reyner, Hsin-Sheng Duan, Baolai Liang, Diana L. Huffaker, Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots, Appl. Phys. Lett. 102(2), 023107, 2013.
  • Dong Yoon Oh, Se-Heon Kim, Jingqing Huang, A. Scofield, D.L. Huffaker, A. Scherer, “Self-aligned active quantum nanostructures in photonic crystals via selective wet-chemical etching”, Nanotechnology, 24(26), 265201, (2013).
  1. Joshua Shapiro, Andrew Lin, Christian Ratsch, Diana L. Huffaker, “Temperature Dependence of Stacking Faults in Catalyst-Free GaAs Nanopillars” Nanotechnology 24, (2013).
  2. Mariani, A. Scofield, C.-H. Hung, D.L. Huffaker, “GaAs nanopillars-array solar cells employing in situ surface passivation”, Nature Communications, 4, 1497 (2013).
  • Mariani, Z. Zhou, A. Scofield, D. L. Huffaker “Direct-bandgap epitaxial core–multishell nanopillar photovoltaics featuring subwavelength optical concentrators”, Nano Letters, 13(4), 1632-1637, (2013).
  • Mariani, A. Scofield, C.-H. Hung, D.L. Huffaker, “GaAs nanopillars-array solar cells employing in situ surface passivation”, Nature Communications, 4, 1497 (2013).



  1. C. Scofield, A. Lin, J.N. Shapiro, P.N. Senanayake, G. Mariani, M. Haddad, B.L. Liang, D.L. Huffaker, Composite axial/core-shell nanopillar light emitting diodes at 1.3 µm., Appl. Phys. Lett., 101, 053111 (2012)
  2. I. Mazur, V.G. Dorogan, G.J. Salamo, G.G. Tarasov, B.L. Liang, C.J. Reyner, K. Nunna, and D.L. Huffaker, Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures, Appl. Phys. Lett. 100, 033102 (2012)
  3. Nunna, S.L. Tan, C.J. Reyner, A.R.J. Marshall, B.L. Liang, A. Jallipalli, J.P.R. David, D.L. Huffaker, Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique, IEEE Photonic Technology Letter. 24(3), 218-220 (2012).
  4. Lin, J.N. Shapiro, P.N. Senanayake, A.C. Scofield, P.S. Wong, B.L. Liang, and D.L. Huffaker, Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy, Nanotechnology, 23, 105701 ;(2012)
  5. Wu, Y.F.M. Makableh, R. Vasan, M.O. Manasreh, B.L. Liang, C.J. Reyner, and D.L. Huffaker, Strong interband transitions in InAs quantum dots solar cell, Appl. Phys. Lett., 100, 051907 (2012)
  6. Gradkowski, T.J. Ochalski, N. Pavarelli, H.Y. Liu, J. Tatebayashi, D.P. Williams, D.J. Mowbray, G. Huyet, D.L. Huffaker, Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems, Phys. Rev. B. 85(3), 035432 (2012)
  7. J. Simmonds, R.B. Laghumavarapu, M. Sun, A. Lin, C.J. Reyner, B.L. Liang, D.L. Huffaker, Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers, Appl. Phys. Lett. 100(24), 243108, (2012)
  8. Ouyang, E.H. Steenbergen, Y.H. Zhang, K. Nunna, D.L. Huffaker, D.J. Smith, Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy, Journal of Vacuum Science & Technology B 30(2) 02B106 (2012)
  9. H. Steenbergen, K. Nunna, L. Ouyang, B. Ullrich, D.L. Huffaker, D.J. Smith, Y.H. Zhang, Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates, Journal of Vacuum Science & Technology B 30(2) 02B107(2012)
  10. Mariani, Y. Wang, P.S. Wong, A. Lech, C.H. Hung, J.N. Shapiro, S. Prikhodko, M. El-Kady, R.B. Kaner, and D.L. Huffaker, Three-Dimensional Core-Shell Hybrid Solar Cells via Controlled in Situ Materials Engineering, Nano Letters, 12(7), 3581-3586 (2012)
  11. Mariani, Y. Wang, P. S. Wong, A. Lech, C. H. Hung, J. N. Shapiro, S. Prikhodko, M. El-Kady, R. B. Kaner, and D. L. Huffaker, “Three-Dimensional Core–Shell Hybrid Solar Cells via Controlled in Situ Materials Engineering”, Nano Letters, 12(7), 3581-3586, (2012).
  • Senanayake, C.-H. Hung, A. Farrell, D. A. Ramirez, J. Shapiro, C.-K. Li, Y.-R. Wu, M. M. Hayat, and D. L. Huffaker, “Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors,” Nano Lett. 12, 6448-6452 (2012).
  • Senanayake, C.-H. Hung, J. Shapiro, A. Scofield, A. Lin, B. S. Williams, and D. L. Huffaker, “3D Nanopillar optical antenna photodetectors,” Opt. Express 20, 25489-25496 (2012).



  1. C. Scofield, S-H Kim, J.N. Shapiro, A. Lin, B.L. Liang, A. Scherer, D.L. Huffaker, Bottom-up Photonic Crystal Lasers, Nano Letters, 11(12), 5387-5390, (2011)
  • Liu, R.S. Kim, B.L. Liang, D.L. Huffaker, H.R. Fetterman, High-Speed InAs Quantum-Dot Electrooptic Phase Modulators, IEEE Photonics Technology Letters, 23(23) 1748-50 (2011)
  • N. Shapiro, A. Lin, and D.L. Huffaker, C. Ratsch, Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar, Phys. Rev. B, 84, 085322 (2011)
  • J. Reyner, J. Wang, K. Nunna, A. Lin, B.L. Liang, M.S. Goorsky, and D.L. Huffaker, Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction, Appl. Phys. Lett. 99, 231906 (2011)
  • H. Huang, G. Balakrishnan, D.L. Huffaker, Growth Mode and Defect Evaluation of GaSb on GaAs Substrate: A Transmission Electron Microscopy Study, Journal of Nanoscience and Nanotechnology, 11(6), 5108-5113 (2011)
  • N. Senanayake, C.H. Hung, J.N. Shapiro, A. Lin, B.L. Liang, B.S. Williams, and D.L. Huffaker, Surface Plasmon-Enhanced Nanopillar Photodetectors, Nano Letters 11(12), 5279-5283 (2011)
  • Adam C. Scofield, Joshua N. Shapiro, Andrew Lin, Alex D. Williams, Ping-Show Wong, Baolai L. Liang, and Diana L. Huffaker, Bottom-up Photonic Crystal Cavities Formed by Patterned III–V Nanopillars, Nano Letters, 11(6), 2242, (2011).
  • Mariani, P. S. Wong, A. Katzenmeyer, F. Leonard, J. N. Shapiro, D. L. Huffaker, “Patterned Radial GaAs Nanopillar Solar Cells”, Nano Letters, 11, 2490, (2011).


  1. S. Wong, B. L. Liang, and D. L. Huffaker, “InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation”, Journal of Nanoscience and Nanotechnology 10, 1537 (2010).
  2. S. Wong, B. L. Liang, R. Molecke, J. Tatebayashi, and D. L. Huffaker, “Controlled formation and Wulff simulation of equilibrium crystal shapes of GaAs pyramidal structures on nano-patterned substrates”, Crystal Growth & Design 10, 2509 (2010).
  3. Tatebayashi, G. Mariani, A. Lin, R. F. Hicks, and D. L. Huffaker, “Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes”, Appl. Phys. Lett. 96, 253101 (2010).
  4. Giacomo Mariani, Ramesh B. Laghumavarapu, Bertrand Tremolet de Villers, Joshua Shapiro, Pradeep Senanayake, Andrew Lin, Benjamin J. Schwartz and Diana L. Huffaker, “Hybrid Conjugated Polymer Solar Cells using Patterned GaAs Nanopillars”, Appl. Phys. Lett. 97, 013107 (2010).
  5. Tatebayashi, A. Lin, P. S. Wong, R. F. Hicks, and D. L. Huffaker: “Visible Light Emission from Self-Catalyzed GaInP/GaP Core-Shell Double Heterostructure Nanowires on Silicon”, J. Appl. Phys. 108, 034315 (2010).
  6. He, C. J. Reyner, B. L. Liang, K. Nunna, D. L. Huffaker,, N. Pavarelli, K. Gradkowski, T. J. Ochalski, G. Huyet, V. G. Dorogan, Y. I. Mazur, G. J. Salamo, “Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: Control of type I to type II transition”, Nano Letters, 10, 3052, (2010).
  7. Pavarelli, K. Gradkowski, T. J. Ochalski, G. Huyet, B. L. Liang, D. L. Huffaker, “Coulomb effect inhibiting spontaneous emission in charged quantum dot”, has been submitted to Appl. Phys. Lett. 97, 091105, 2010.
  8. Ping-Show Wong, Baolai Liang, Andrew Lin, Jun Tatebayashi, Diana L. Huffaker, 1.52-µm Photoluminescence Emissions from InAs Quantum Dots Grown on Nanopatterned GaAs Buffers, Appl. Phys. Lett. 97(14) 143111 (2010).
  9. Joshua N. Shapiro, Andrew Lin, Adam C. Scofield, Clayton Tu, Ping-Show Wong, Pradeep N. Senanayake, Giacomo Mariani, Baolai Liang, Diana L. Huffaker, Axial InGaAs heterostructure embedded in GaAs patterned nanopillars, Appl. Phys. Lett. 97(24) 243102 (2010).
  10. Pradeep N. Senanayake, Andrew Lin, Giacomo Mariani, Joshua Shapiro, Clayton Tu, Adam C. Scofield, Ping-Show Wong, Baolai Liang, Diana L. Huffaker, Photoconductive Gain in Patterned Nanopillar Photodetector Arrays, Appl. Phys. Lett. 2010 97(20) 203108 (2010).



  1. Tatebayashi, B. L. Liang, D. A. Bussian, H. Htoon, S.H. Huang, G. Balakrishnan, V. Klimov, L. R. Dawson, D. L. Huffaker, “Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode”, IEEE Transactions on Nanotechnology, 8(2) 269-274, 2009.
  2. Tatebayashi, N. Nuntawong, P. S. Wong, Y. C. Xin, L. F. Lester, and D. L. Huffaker, “Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices”, Journal of Physics. D: Applied Physics 42, 073002 (2009).
  3. Tatebayashi, A. Jallipalli, M. N. Kutty, S. Huang, K. Nunna, G. Balakrishnan, L.R. Dawson, D.L. Huffaker, Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates, IEEE Journal of Selected Topics in Quantum Electron. 15(3) 716-723 (2009).
  4. Jallipalli, G Balakrishnan, S H Huang, T J Rotter, K C Nunna, B L Liang, L R Dawson, D L Huffaker, “Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90° misfit dislocations”, Nanoscale Research Letters 4(12), 1458-1462, 2009.
  5. Jallipalli, K. Nunna, M.N. Kutty, G. Balakrishnan, G. B. Lush, L.R. Dawson, and D.L. Huffaker, “Compensation of interfacial states located inside the “buffer-free” GaSb/GaAs (001) heterojunction via ä-doping”, Appl. Phys. Lett., 95 072109 (2009).
  6. Jallipalli, K. Nunna, M.N. Kutty, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker, “Electronic characteristics of interfacial states embedded in the “buffer-free” GaSb/GaAs (001) heterojunctions”, Appl. Phys. Lett. 95(20) 202107 (2009).
  7. L. Liang, A. Lin, N. Pavarelli, C. Reyner, J. Tatebayashi, K. Nunna, J. He, T. J. Ochalski, G. Huyet, D. L. Huffaker, “GaSb/GaAs type-II quantum dots grown by droplet epitaxy”, Nanotechnology, 20(45) 455604, (2009).
  8. S. Wong, B. L. Liang, J. Tatebayashi, L. Xue, N. Nuntawong, M. N. Kutty, S. R. J. Brueck, and D. L. Huffaker, “Fabrication and characteristics of broad-area light-emitting diode based on nano-patterned quantum dots”, Nanotechnology 20 035302 (2009).
  • J. Rotter, J. Tatebayashi, P. Senanayake, G. Balakrishnan, M. Rattunde, J. Wagner, J. Hader, J. V. Moloney, S. W. Koch, L. R. Dawson, and D. L. Huffaker “Continuous-wave lasing at room-temperature of 2-µm Sb-based optically-pumped VECSELs monolithically grown on GaAs substrates”, Appl. Phys. Express. 2, 112102 (2009).
  1. Shenghong Huang, Ganesh Balakrishnan, and Diana L. Huffaker, “Interfacial misfit array formation for GaSb growth on GaAs”, J. Appl. Phys. 105, 103104 (2009).
  • Li Gao, Robyn L. Woo, Baolai Liang, Marta Pozuelo, Sergey Prikhodko, Mike Jackson, Niti Goel, Mantu K. Hudait, Diana L. Huffaker, Mark S. Goorsky, Suneel Kodambaka, and Robert F. Hicks, “Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon”, Nano Lett. 9(6), 2223-2228 (2009).
  1. Gradkowski, T.J. Ochalski, D.P.Williams., J.Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, E.P. O’Reilly, G.Huyet, L.R. Dawson, D.L. Huffaker, “Optical transition pathways in type-II Ga(As)Sb quantum dots”, J. of Luminescence 129, 456(2009).
  2. Gradkowski, T.J. Ochalski, D.P. Williams, S.B. Healy, J. Tatebayashi, G. Balakrishnan, E. P. O’Reilly, G. Huyet, and D. L. Huffaker, “Coulomb effects in type-II Ga(As)Sb quantum dots”, Phys. Status Solidi B 246 (4), 752 (2009).
  3. Gradkowski, N. Pavarelli, T.J. Ochalski, D.P. Williams, J. Tatebayashi, G. Huyet, E.P. O’Reilly, D.L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots”, Appl. Phys. Lett. 95(6) 061102, (2009).