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Integrated NanoMaterials Laboratory

Nanomaterials and nanostructures grown in INML are used in lasers, solar cells, detectors, transistors, modulators, and a wide range of other electronic and photonic devices.

Facilities

INML is currently equipped with two state-of-the-art Molecular Beam Epitaxy (MBE) reactors to provide semiconductor wafer growth foundry services. MBE-I is designed for providing (In, Ga, Al – As, Sb) epitaxial wafers, while MBE-II is designed to provide (In, Ga, Al – N) epitaxial wafers. This is the only (III-As / Sb + III-N) combined MBE system at UCLA.

MBE Chamber 1: III-As/Sb

VEECO GEN-930

  • In, Ga, Al effusion cells for group III
  • Automated valved crackers for As and Sb
  • Si, Te and Be cells for doping
  • Up to 3″ diameter wafers
  • Automated Growth control — MOLLY
  • 200 a.mu. RGS–SRS
  • Emissivity correcting optical pyrometer
  • RHEED for real time in-situ monitoring
  • KSA400 software for image/video capture for surface analysis

Reserve Equipment Time

MBE Chamber 2: III-N

VEECO GEN-930

  • In, Ga, Al effusion cells for group III
  • N plasma source with RF generator
  • Fully automated N gas delivery system
  • High temperature substrate heater – 1200°C
  • Si, and Mg cells for doping
  • Up to 3″ diameter wafers
  • Automated Growth control — MOLLY
  • 200 a.mu. RGS–SRS
  • Emissivity correcting optical pyrometer

Reserve Equipment Time