Integrated NanoMaterials Laboratory Equipment

N-MBE system

Description: The N -MBE is designed for providing (In, Ga, Al) – N semiconductor wafer epitaxy services

  • In, Ga, Effusion cells, Al SUMO cells
  • N plasma source with RF generator
  • Fully automated N gas delivery system
  • High temperature substrate heater (1200°C)
  • Si, and Mg cells for doping
  • Up to 3″ diameter wafers
  • Growth control — MOLLY
  • 100 RGA
  • RHEED and KSA400 software for in-situsurface monitoring and analysis