Integrated NanoMaterials Laboratory Equipment
N-MBE system
Description: The N -MBE is designed for providing (In, Ga, Al) – N semiconductor wafer epitaxy services
- VEECO GEN-930 MBE
- In, Ga, Effusion cells, Al SUMO cells
- N plasma source with RF generator
- Fully automated N gas delivery system
- High temperature substrate heater (1200°C)
- Si, and Mg cells for doping
- Up to 3″ diameter wafers
- Growth control — MOLLY
- 100 a.mu. RGA
- RHEED and KSA400 software for in-situsurface monitoring and analysis
