PROJECTS: Efficiency Electro-Optic Modulators with III-(As, Sb) Quantum Dots
The overall objective of this project is to demonstrate a quantum-structure-based electro-optic modulator to surpass current state-of-art speed, loss and efficiency characteristics. Semiconductor EOMs based on quantum structures are more attractive than traditional LiNbO3 EOMs.A semiconductor EOM with quantum structure active region offers a path to highly efficient modulators with small sizes and low modulation voltages. Also, quantum-based EOMs have the potential to be monolithically integrated with other device components under low-driving voltage. In order to address this issue, we propose 1.) incorporating high density (>1011/cm2) small self-assembled III-(As, Sb) QDs and 2.) patterned nanopillar structures into the EOM active region to achieve high efficient EOMs working at communication wavelengths of =1.33µm and =1.55µm.